发明名称 |
Verfahren zum Herstellen einer Halbleitervorrichtung |
摘要 |
Reaction products due to etching of a semiconductor sample by using a reactive gas are removed by using a liquid chemical that contains sulfuric acid and hydrofluoric acid at a volume mixing ratio of (5 to 7):(1/400 to 1/1000) and is kept at 25 DEG -70 DEG C. Reaction products and a resist mask are removed simultaneously by using a liquid chemical that contains sulfuric acid, a hydrogen peroxide solution, and hydrofluoric acid at a volume mixing ratio of (5 to 7):1:(1/400 to 1/1000) and is kept at 70 DEG -100 DEG C. |
申请公布号 |
DE19829863(B4) |
申请公布日期 |
2006.06.29 |
申请号 |
DE1998129863 |
申请日期 |
1998.07.03 |
申请人 |
MITSUBISHI DENKI K.K., TOKYO;RYODEN SEMICONDUCTOR SYSTEM ENGINEERING CORP., ITAMI |
发明人 |
KINOSHITA, TAKATOSHI;KADOWAKI, HIROSHI |
分类号 |
H01L21/302;H01L21/306;H01L21/02;H01L21/3065;H01L21/308;H01L21/3213 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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