| 摘要 |
A CMOS image sensor and a method for fabricating the same are disclosed, in which an impurity ion area is formed in a semiconductor substrate to form a transfer path for optical charges. Dead zone and dark current characteristics are thereby simultaneously improved. The CMOS image sensor includes a first conductive type semiconductor substrate, a device isolation film, a gate electrode, a second conductive type first impurity ion area and a first conductive type first impurity ion area formed with a deposition structure in the semiconductor substrate below the gate electrode, a second conductive type second impurity ion area, and a first conductive type second impurity ion area formed on a surface of the second conductive type second impurity ion area.
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