发明名称 |
METHOD OF FORMING CONTACT HOLE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
A method of forming contact holes is provided. A substrate having a plurality of device structures is provided. A first dielectric layer and a conductive layer sequentially cover the device structures and the surface of the substrate. A recess is formed in the conductive layer between every two neighboring device structures. A pair of composite spacers is formed in the recess. By using the composite spacers as a mask, a portion of the exposed conductive layer is removed to form a plurality of openings between every two neighboring device structures. A second dielectric layer is then formed on the sidewalls of the openings. A third dielectric layer is formed over the substrate. Portions of the third dielectric layer and the first dielectric layer above the openings are removed to form a plurality of self-aligned contact holes.
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申请公布号 |
US2006134910(A1) |
申请公布日期 |
2006.06.22 |
申请号 |
US20050908871 |
申请日期 |
2005.05.31 |
申请人 |
HUANG MIN-SAN;LAI LEON;WANG PIN-YAO |
发明人 |
HUANG MIN-SAN;LAI LEON;WANG PIN-YAO |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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