| 摘要 |
The present invention is for providing a sophisticated active matrix type organic semiconductor device. A first electrode 102 is formed on an insulated surface. A second insulated film 104 is formed on the first electrode 102 via a first insulated film 103 . An organic semiconductor film is formed on an opening part formed on the second insulated film 104 and the second insulated film 104 . An organic semiconductor film 105 is obtained by polishing the same until the second insulated film 104 is exposed. Furthermore, by forming a second electrode 106 and a third electrode 107 on the organic semiconductor film 105 , an organic semiconductor device of the present invention can be obtained.
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