| 摘要 |
PROBLEM TO BE SOLVED: To provide a field-effect transistor capable of preventing the occurrence of a cross hatch on the surface of a laminate structure to eliminate a manufacturing problem, and of reducing a current leak on a gate electrode part. SOLUTION: The field-effect transistor comprises a GaAs substrate; a buffer layer formed on the GaAs substrate to have a laminate structure in which an Al<SB>x</SB>Ga<SB>1-x</SB>As layer (wherein 0≤x≤1) and an Inp layer are alternately laminated; and a transistor operating part that is formed on the buffer layer, is structured to have a plurality of layers of films that are constituted mainly of any of InP, InAlAs, and InGaAs, and has a transistor capability. COPYRIGHT: (C)2006,JPO&NCIPI
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