| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high-frequency switching transistor capable of switching, at a low cost, a high-frequency signal having a greater high-frequency-signal amplitude as a conventional high-frequency switching transistor has been capable, and also to provide a high-frequency circuit using the high-frequency switching transistor. <P>SOLUTION: The high-frequency switching transistor 100 is provided with: a substrate 102 having a substrate dopant concentration; a barrier region 104 bounded on the substrate and having a first conductivity type, the barrier region dopant concentration being higher than the substrate dopant concentration; a source region 108 and a drain region 110 embedded in the barrier region and having a second conductivity type, the dopant concentrations thereof being higher than the barrier region dopant concentration; a channel region inclusive of a subregion of the barrier region 104 extending from the source region 108; and an insulation region 114 which is disposed between the channel region 112 and the gate electrode 116 covering the channel region 112. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
