发明名称 Passivating metal etch structures
摘要 A method to passivate a freshly etched metal structure comprises providing a metal surface on a substrate that has been etched by a first particle beam, exposing the metal surface to a passivation gas, and exposing the freshly etched metal structures to a second particle beam in the presence of the passivation gas. The second particle beam may comprise an electron beam, an ion beam, or a laser beam. The passivation gas may comprise water vapor, oxygen gas, or hydrocarbon gas.
申请公布号 US2006134920(A1) 申请公布日期 2006.06.22
申请号 US20040015072 申请日期 2004.12.17
申请人 LIANG TED 发明人 LIANG TED
分类号 H01L21/302;C23C16/00 主分类号 H01L21/302
代理机构 代理人
主权项
地址