| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce temperature drift in sensor characteristics. <P>SOLUTION: The sensor system 101 comprises a sensor device 10 and an integrated circuit 20 for driving the sensor device 10. The sensor device 10 comprises an upper sealing body 2 including silicon as a substrate as a sensor body section 1 including silicon as the substrate, and a lower sealing body 3. The integrated circuit 20 for driving the sensor device 10 forms a laminate with the sensor device 10. The sensor body section 1 is electrically connected to a wiring pattern 12 of the integrated circuit 20 through a through-cable run 4 that penetrates the upper sealing body 2 and an electrode 5 for mounting, disposed on the outer surface of the upper sealing body 2. The sensor device 10 is connected to an MID substrate 30 through the integrated circuit 20. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
