发明名称 SEMICONDUCTOR DEVICE
摘要 At least a part of the inner leads 1a of a lead frame 1 is covered with a plating for a metallic fine wire connection, at least the entire portion where the lead frame 1 joins with the adhesive layer 2 is covered by at least one metal or alloy thereof different from the metallic fine wire connecting use plating. The metal or alloy is selected from the group consisting of gold, platinum, iridium, rhodium, palladium, ruthenium, indium, tin, molybdenum, tungsten, gallium, zinc, chromium, niobium, tantalum, titanium and zirconium. Thereby, generation of defects, such as leakage and shorting, due to ion migration can be prevented.
申请公布号 KR100591235(B1) 申请公布日期 2006.06.19
申请号 KR20020016992 申请日期 2002.03.28
申请人 发明人
分类号 H01L23/50;H01L23/00;H01L23/28;H01L23/31;H01L23/433;H01L23/495;H01L23/498 主分类号 H01L23/50
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