发明名称 |
Magnetic random access memory including middle oxide layer and method of manufacturing the same |
摘要 |
In a magnetic random access memory (MRAM) having a transistor and a magnetic tunneling junction (MTJ) layer in a unit cell, the MTJ layer includes a lower magnetic layer, an oxidation preventing layer, a tunneling oxide layer, and an upper magnetic layer, which are sequentially stacked. The tunneling oxide layer may be formed using an atomic layer deposition (ALD) method. At least the oxidation preventing layer may be formed using a method other than the ALD method.
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申请公布号 |
US7061034(B2) |
申请公布日期 |
2006.06.13 |
申请号 |
US20040830119 |
申请日期 |
2004.04.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK SANG-JIN;KIM TAE-WAN;LEE JUNG-HYUN;PARK WAN-JUN;SONG I-HUN |
分类号 |
H01L27/105;H01L31/062;G11C11/15;G11C11/16;H01F10/32;H01F41/30;H01L21/8246;H01L43/08 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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