发明名称 Methods of forming roughened layers of platinum
摘要 A method of forming a roughened layer of platinum, including: a) providing a substrate within a reaction chamber; b) forming an adhesion layer over the substrate; c) flowing an oxidizing gas into the reaction chamber; d) flowing a platinum precursor into the reaction chamber and depositing platinum from the platinum precursor onto the adhesion layer in the presence of the oxidizing gas; and e) maintaining a temperature within the reaction chamber at from about 0° C. to less than 300° C. during the depositing.
申请公布号 US7060615(B2) 申请公布日期 2006.06.13
申请号 US20030741256 申请日期 2003.12.17
申请人 MICRON TECHNOLOGY, INC. 发明人 MARSH EUGENE P.
分类号 H01L21/44;H01G4/005;H01L21/02;H01L23/532 主分类号 H01L21/44
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