| 发明名称 |
Semiconductor device and manufacturing process therefor |
| 摘要 |
There is provided a semiconductor device comprising a dielectric film made of a high dielectric constant material, in which a leak current is reduced in the film and which exhibits improved device reliability. Specifically, a dielectric film 142 is a metal-compound film having a composition represented by the formula MO<SUB>x</SUB>C<SUB>y</SUB>N<SUB>z </SUB>wherein x, y and z meet the conditions: 0<x, 0.1<=y<=1.25, 0.01<=z and x+y+z=2; and M comprises at least Hf or Zr.
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| 申请公布号 |
US2006121671(A1) |
申请公布日期 |
2006.06.08 |
| 申请号 |
US20060324536 |
申请日期 |
2006.01.04 |
| 申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
YAMAMOTO TOMOE;IIZUKA TOSHIHIRO |
| 分类号 |
H01L21/8242;H01L27/04;H01L21/02;H01L21/314;H01L21/316;H01L21/318;H01L21/822;H01L27/108;H01L29/78 |
主分类号 |
H01L21/8242 |
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