发明名称 |
Structure of strained silicon on insulator and method of manufacturing the same |
摘要 |
Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiO<SUB>2 </SUB>layer formed on the insulating substrate, and a strained silicon layer formed on the SiO<SUB>2 </SUB>layer.
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申请公布号 |
US2006118870(A1) |
申请公布日期 |
2006.06.08 |
申请号 |
US20050071150 |
申请日期 |
2005.03.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK YOUNG-SOO;XIANYU WENXU;NOGUCHI TAKASHI |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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