| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a preferable electrode structure in a semiconductor light emitting device formed by pasting a semiconductor stack structure on a support, and thereby provide a semiconductor light emitting device having an excellent characteristic. <P>SOLUTION: A semiconductor light emitting device has a semiconductor stack structure including a first semiconductor layer and a second semiconductor layer having conduction types different from each other, wherein the first semiconductor layer is connected with a first electrode, and the second semiconductor layer is connected with a second electrode. The first electrode has a portion electrically conducted with the first semiconductor layer and an external connection on one main surface. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
