发明名称 LASER IRRADIATION METHOD, LASER IRRADIATION APPARATUS, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve productivity in laser annealing using a CW laser or a pseudo CW laser, which is inferior compared with that in the case of using an excimer laser. SOLUTION: Laser light is used as a fundamental laser without being transmitted through a nonlinear optical element, and pulse laser light with high intensity and a high repetition frequency is irradiated to a semiconductor thin film, so that laser annealing is performed. Since the nonlinear optical element is not used, and the laser light is not converted into a higher harmonic, a laser oscillator having a large output can be used for a laser annealing method. Accordingly, since the width of a region of crystals having a large grain size formed in a single scan is expanded, productivity is remarkably improved. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006148086(A) 申请公布日期 2006.06.08
申请号 JP20050305339 申请日期 2005.10.20
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TANAKA KOICHIRO;YAMAMOTO YOSHIAKI
分类号 H01L21/268;H01L21/02;H01L21/20;H01L21/265;H01L21/336;H01L27/12;H01L29/786 主分类号 H01L21/268
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