发明名称 SOLID-STATE IMAGING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus capable of obtaining a consecutive output characteristic up to a high luminous quantity region and attaining a considerably wide dynamic range. SOLUTION: The solid-state imaging apparatus 1 is provided, wherein a plurality of pixel units 10 are two-dimensionally arranged, each pixel unit 10 including a photoelectric conversion element PD for converting incident light into electric charges, a floating diffusion FD, and a MOS transistor Q11 for transferring the electric charges stored in the photoelectric conversion element PD to the floating diffusion FD. The solid-state imaging apparatus 1 is also provided with a pulse generating circuit 50a for controlling the MOS transistor Q11 so as to transfer the electric charge stored in the photoelectric conversion element PD to the floating diffusion FD. The pulse generating circuit 50a controls a first transfer wherein excess electric charges produced in excess of a fixed amount less than the saturation electric charge amount of the photoelectric conversion element PD are transferred, and a second transfer wherein the electric charges stored in the photoelectric conversion element PD after the first transfer are transferred in one frame period. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006148328(A) 申请公布日期 2006.06.08
申请号 JP20040333208 申请日期 2004.11.17
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KASUGA SHIGETAKA;MURATA TAKAHIKO;YAMAGUCHI TAKUMI
分类号 H01L27/146;H04N5/335;H04N5/341;H04N5/355;H04N5/374;H04N5/376 主分类号 H01L27/146
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