| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN-based compound semiconductor light emitting device. <P>SOLUTION: The semiconductor light emitting device comprises an n-type semiconductor layer (12) sequentially formed on a substrate (10); an active layer (14) formed on a first region of the n-type semiconductor layer; a p-type semiconductor layer (16) formed on the active layer; a p-type electrode (20) formed on the p-type semiconductor layer; an n-type electrode (30) formed on a second region separated from the first region of the n-type semiconductor layer; a dielectric layer (52) formed on the sidewalls of the p-type semiconductor layer, active layer, and n-type semiconductor layer; and a reflecting layer (54) formed on the dielectric layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
