发明名称 Capacitor for a semiconductor device and method of forming the same
摘要 In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surface of the dielectric layer along the profile of the lower electrode and a second sub-electrode is continuously formed on the first sub-electrode corresponding to the top surface of the lower electrode, so an opening portion of the lower electrode is covered with the second sub-electrode. The first and second sub-electrodes include first and second metal nitride layers in which first and second stresses are applied, respectively. Directions of the first and second stresses are opposite to each other. Accordingly, cracking is minimized in the upper electrode with the high dielectric constant, thereby reducing current leakage.
申请公布号 US2006113580(A1) 申请公布日期 2006.06.01
申请号 US20050286316 申请日期 2005.11.23
申请人 CHO YOUNG-JOO;LIM HYUN-SEOK;KIM RAK-HWAN;KIM JUNG-WOOK;LEE HYUN-SUK 发明人 CHO YOUNG-JOO;LIM HYUN-SEOK;KIM RAK-HWAN;KIM JUNG-WOOK;LEE HYUN-SUK
分类号 H01L21/00 主分类号 H01L21/00
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