SEMICONDUCTOR COMPOSITE DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR COMPOSITE DEVICE, LED HEAD USING SEMICONDUCTOR COMPOSITE DEVICE AND IMAGE FORMING APPARATUS USING LED HEAD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor junction state in which even if excess flattening and surface treatment are not performed, processing and bonding process on the front surface of bonding are easy and which obtains good bonding strength and bonding strength distribution.

SOLUTION: A semiconductor composite device having a semiconductor thin film layer 104 and a substrate 101 so that a semiconductor thin film layer 105 and the substrate 101 are bonded mutually through a high melting point metal 103, and an alloy layer 121 of a high melting point metal 103 and a low melting point metal 104 and the alloy 121 has a higher melting point than the low melting point metal 104. The low melting point metal is selected from the group consisting of In, Sn, Bi, Ce and Tl. The high melting point metal is selected from the group consisting of Au, Pd and Ni.

COPYRIGHT: (C)2006,JPO&NCIPI