| 摘要 |
1,170,185. Semi-conductor devices. HITACHI Ltd. 16 July, 1968 [28 July, 1967], No. 33868/68. Heading H1K. To ensure a strong bond and good ohmic connection between a semi-conductor member 11 and the refractory metal electrode 14 on its surface, a semi-conductor layer 17 is deposited on this surface from the vapour stage prior to the provision of the metal electrode, this layer being of the same conductivity type as the semiconductor region whereon it is deposited and having a surface impurity concentration of at least 1 x 10<SP>20</SP> atoms per c.c. The metal electrode 14, of molybdenum, chromium, tungsten or titanium is then disposed on this layer, and carries a further metal layer 15 of aluminium on to which a gold connector wire 16 is applied. The semi-conductor member is of silicon and its surfaces are covered with a layer 13 of silicon dioxide. In a further embodiment, Fig. 4, not shown, the semi-conductor member, silicon dioxide layer and refractory metal electrodes are covered with a layer of glass in which holes are provided to allow contact to the electrodes. |
