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发明名称
Tri-gated molecular field effect transistors and a method for fabricating the same
摘要
申请公布号
KR100584719(B1)
申请公布日期
2006.05.30
申请号
KR20040094585
申请日期
2004.11.18
申请人
发明人
分类号
H01L21/335
主分类号
H01L21/335
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代理人
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