| 摘要 |
The capacitance of a capacitor is prevented from decreasing without increasing the thickness. A capacitor of a semiconductor device comprises lower and upper electrodes and an insulating film interposed between the lower and upper electrodes. The surface, on the insulating layer side, of the lower electrode is nitrided. When the lower electrode is made of polysilicon, the oxidation resistance at heat treatment in the after-process is improved because the surface is nitrided. Particularly in the case of a DRAM, at the effect is strong since the capacitance of the capacitor is large. Further the leak current in the capacitor is reduced.
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