发明名称 Method for fabricating capacitor array preventing crosstalk between adjacent capacitors in semiconductor device
摘要 A capacitor array of a semiconductor device including a plurality of capacitors is provided. The capacitor array includes a plurality of lower electrodes, which are formed over a semiconductor substrate. A dielectric layer formed over the lower electrodes, and an upper electrode formed over the dielectric layer. The plurality of lower electrodes are insulated from each other either by an insulating layer having pores of a low dielectric constant, or by an air gap.
申请公布号 US7052967(B2) 申请公布日期 2006.05.30
申请号 US20030394139 申请日期 2003.03.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE HAE-JEONG;KANG HO-KYU
分类号 H01L21/20;H01L27/108;H01L21/02;H01L21/764;H01L27/08 主分类号 H01L21/20
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