SELECTIVE REMOVAL CHEMISTRIES FOR SEMICONDUCTOR APPLICATIONS, METHODS OF PRODUCTION AND USES THEREOF

摘要

Removal chemistry solutions are described herein that include at least one low H<SUB>2</SUB>O content fluorine-based constituent and at least one solvent or solvent mixture. Removal chemistry solutions also include: hydrogen fluoride gas, and at least one solvent or solvent mixture. Methods are described herein for producing removal chemistry solutions that include providing at least one gaseous low H<SUB>2</SUB>O content fluorine-based constituent, providing at least one solvent or solvent mixture, and bubbling the at least one low H<SUB>2</SUB>O content fluorine-based constituent into the at least one solvent or solvent mixture to form the removal chemistry solution. Methods for producing removal chemistry solutions are also described that include: providing at least one low H<SUB>2</SUB>O content fluorine-based constituent, providing at least one solvent or solvent mixture, and blending the at least one low H<SUB>2</SUB>O content fluorine-based constituent into the at least one solvent or solvent mixture to form the removal chemistry solution. Additional methods of forming a removal chemistry solution include: providing at least one gaseous anhydrous fluorine-based constituent, providing at least one solvent or solvent mixture, and bubbling the at least one anhydrous fluorine-based constituent into the at least one solvent or solvent mixture to form the solution. Also, methods of forming a removal chemistry solution, as described herein include: providing hydrogen fluoride gas, providing at least one solvent or solvent mixture, and bubbling the hydrogen fluoride gas into the at least one solvent or solvent mixture to form the solution.