FERROMAGNETIC FILM, MAGNETIC RESISTANCE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

摘要

A ferromagnetic film which comprises a ferromagnetic element and a non-magnetic element and has a first portion and a second portion, wherein the first portion has a concentration of a non-magnetic element lower than the average concentration of the non-magnetic element in the ferromagnetic film, and the second portion has a concentration of a non-magnetic element higher than the average concentration of the non-magnetic element in the ferromagnetic film, and wherein the non-magnetic element comprises at least one element selected from the group consisting of Zr, Ti, Nb, Ta, Hf, Mo and W. The above ferromagnetic film is applied to a magnetic free layer of a magnetic resistance element in MRAM.