| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory that can be manufactured easily and can be easily put to miniaturization. <P>SOLUTION: In the semiconductor memory, source and drain regions 104 and 105 partially overlap floating gates 110 and 111, and the side faces of the floating gates 110 and 111 are formed roughly along contact plugs 113 and 114. Since the contact plugs 113 and 114 exist near the floating gates 110 and 111, the writing speed and the erasing speed of a memory device can be increased without increasing the area of the device. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
