发明名称 Method and apparatus for oxidizing nitrides
摘要 A method for oxidizing a nitride film is disclosed, which includes the steps of: providing a nitride film formed on an electrically conductive substrate; irradiating the nitride film with a light beam and getting close to the nitride film with a electrically conductive probe; and exerting a bias between the electrically conductive substrate and the electrically conductive probe. The method can oxidize the nitrides quickly and reduce the cost building a nano-structure in the nitride film. An apparatus for oxidizing a nitride film is also disclosed herewith.
申请公布号 US2006110932(A1) 申请公布日期 2006.05.25
申请号 US20060324317 申请日期 2006.01.04
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 TAI HUNG-MING;CHIEN FOREST S.
分类号 H01L21/31;H01L21/26;H01L21/314;H01L21/768 主分类号 H01L21/31
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