发明名称 |
Method of chemical mechanical polishing |
摘要 |
A method of chemical mechanical polishing that polishes a substrate by abrading a target material formed on the substrate with a polishing pad containing a slurry includes setting a polishing end time, at which time a predetermined thickness of the target material will have been removed from the substrate by polishing, polishing the substrate to remove the predetermined thickness of the target material, and increasing a level of byproduct contamination in the polishing pad to decrease a polishing rate, while polishing the substrate, so that the polishing rate decreases to approximately zero at the polishing end time.
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申请公布号 |
US7048612(B2) |
申请公布日期 |
2006.05.23 |
申请号 |
US20040920323 |
申请日期 |
2004.08.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE SUNG-BAE;HA SANG-ROK;LEE HYO-JONG |
分类号 |
B24B1/00;B24B37/04;H01L21/3105;H01L21/321 |
主分类号 |
B24B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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