Formation of high quality quantum dots by using a strained layer,申请号KR20030027986-传众专利搜索

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发明名称	Formation of high quality quantum dots by using a strained layer
摘要
申请公布号	KR100582540(B1)	申请公布日期	2006.05.23
申请号	KR20030027986	申请日期	2003.05.01
申请人		发明人
分类号	H01L33/00;C30B23/02;C30B25/02	主分类号	H01L33/00
代理机构		代理人
主权项
地址

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