发明名称 Semiconductor integrated circuit device
摘要 In a semiconductor integrated circuit device, having a pair of voltage step-down power supply circuits for active and standby conditions, a first reference voltage is formed by amplifying a fixed voltage formed in a fixed voltage generating circuit with an amplifying circuit which can adjust the voltage gain having a resistance circuit and a switch controlled with a first trimming switch setting signal. An internal step-down voltage, when the internal circuit is in the active condition, is outputted from a first output buffer, which is activated with a first control signal. A second reference voltage is formed by adjusting a combination of threshold voltages of MOSFETs and a switch controlled with a second trimming switch setting signal; and, an internal step-down voltage, when the internal circuit is in the standby condition, is outputted with a second output buffer, which is activated with a second control signal.
申请公布号 US7049797(B2) 申请公布日期 2006.05.23
申请号 US20030676605 申请日期 2003.10.02
申请人 RENESAS NORTHERN JAPAN SEMICONDUCTOR, INC. 发明人 FUKUI KENICHI;HIRAKI MITSURU;ITO TAKAYASU;NAKAMURA ISAO
分类号 G05F1/40;G06F1/32;G05F1/10;G05F1/56;G06F15/78;G11C11/407;H01L21/822;H01L27/04;H03K19/00 主分类号 G05F1/40
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