发明名称 |
Bipolar transistor device having phosphorous |
摘要 |
A Si<SUB>1-x</SUB>Ge<SUB>x </SUB>layer 111 b functioning as the base composed of an i-Si<SUB>1-x</SUB>Ge<SUB>x </SUB>layer and a p<SUP>+</SUP> Si<SUB>1-x</SUB>Ge<SUB>x </SUB>layer is formed on a collector layer 102, and a Si cap layer 111 a as the emitter is formed on the p<SUP>+</SUP> Si<SUB>1-x</SUB>Ge<SUB>x </SUB>layer. An emitter lead electrode 129, which is composed of an n<SUP>-</SUP> polysilicon layer 129 b containing phosphorus in a concentration equal to or lower than the solid-solubility limit for single-crystal silicon and a n<SUP>+</SUP> polysilicon layer 129 a containing phosphorus in a high concentration, is formed on the Si cap layer 111 a in a base opening 118. The impurity concentration distribution in the base layer is properly maintained by suppressing the Si cap layer 111 a from being doped with phosphorus (P) in an excessively high concentration. The upper portion of the Si cap layer 111 a may contain a p-type impurity. The p-type impurity concentration distribution in the base layer of an NPN bipolar transistor is thus properly maintained.
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申请公布号 |
US7049681(B2) |
申请公布日期 |
2006.05.23 |
申请号 |
US20040972442 |
申请日期 |
2004.10.26 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
OHNISHI TERUHITO;ASAI AKIRA |
分类号 |
H01L29/02;H01L29/73;H01L21/331;H01L21/8222;H01L21/8248;H01L21/8249;H01L27/06;H01L29/165;H01L29/732;H01L29/737 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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