发明名称 |
Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell |
摘要 |
A field effect transistor memory cell has a source region, a drain region, a channel region and a gate region, with the channel region extending from the source region to the drain region and being formed from at least one nanowire which has at least one defect such that charges can be trapped in the defects and released from the defects by a voltage applied to the gate region. A memory device built up from such memory cells and a method of manufacturing such memory cells is also disclosed.
|
申请公布号 |
US7049625(B2) |
申请公布日期 |
2006.05.23 |
申请号 |
US20030391066 |
申请日期 |
2003.03.17 |
申请人 |
MAX-PLANCK-GESELLSCHAFT ZUR FONDERUNG DER WISSENSCHAFTEN E.V. |
发明人 |
KERN KLAUS;BURGHARD MARKO;CUI JINGBIAO |
分类号 |
H01L29/06;G11C13/02;H01L29/02;H01L29/76;H01L29/788;H01L51/00;H01L51/30 |
主分类号 |
H01L29/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|