发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p>A manufacturing method of a semiconductor device having a through-hole electrode is offered to improve reliability and yield of the semiconductor device. A via hole penetrating through a semiconductor substrate is formed at a location corresponding to a pad electrode. An insulation film is formed on a back surface of the semiconductor substrate and a surface of the via hole. A reinforcing insulation film having an overhung portion at a rim of the via hole is formed on the back surface of the semiconductor substrate. The insulation film on a bottom of the via hole is removed by etching using the reinforcing insulation film as a mask, while the insulation film on a side wall of the via hole remains. The through-hole electrode, a wiring layer and a conductive terminal are formed on the back surface of the semiconductor substrate and the via hole. Finally, the semiconductor substrate is divided into a plurality of semiconductor dice by dicing.</p> |
申请公布号 |
KR20060050151(A) |
申请公布日期 |
2006.05.19 |
申请号 |
KR20050063547 |
申请日期 |
2005.07.14 |
申请人 |
SANYO ELECTRIC CO., LTD.;FUJITSU LIMITED;NEC CORPORATION |
发明人 |
UMEMOTO MITSUO;HOSHINO MASATAKA;TERAO HIROSHI |
分类号 |
H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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