| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device having a reference memory cell that generates reference potential with less variation and does not need any refresh operation. SOLUTION: The semiconductor storage device 100 includes an information memory cell MC that writes and reads data, a memory cell array MCA in which information memory cells are disposed in matrix, information word lines WL connected to information memory cells on respective rows of the memory cell array, information bit lines BL connected to information memory cells on respective columns of the memory cell array, a reference memory cell DMC that stores a single type of digital data for generating reference potential used for identifying data in the information memory cell, a reference bit line DBL connected to the reference memory cell, and a sense amplifier SA connected to the information bit line and the reference bit lines. COPYRIGHT: (C)2006,JPO&NCIPI
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