发明名称 PATTERN DATA PRODUCING METHOD, PATTERN VERIFICATION METHOD, PHOTO MASK PRODUCING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 A pattern data correction method is disclosed, which comprises preparing an integrated circuit pattern, setting a tolerance to the pattern that is allowable error range when the pattern is transferred on a substrate, creating a target pattern within the tolerance, and making correction for the target pattern to make a first correction pattern under a predetermined condition.
申请公布号 KR20060048140(A) 申请公布日期 2006.05.18
申请号 KR20050044940 申请日期 2005.05.27
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NOJIMA SHIGEKI;TANAKA SATOSHI;KOTANI TOSHIYA;IZUHA KYOKO;INOUE SOICHI
分类号 H01L21/00;G03F1/36;G03F1/68;G03F1/70;G03F7/20;G06F17/50;G21K5/10;H01L21/027 主分类号 H01L21/00
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