发明名称 Solid state imaging device and production method for the same
摘要 The invention provides a solid state imaging device with high photosensitivity. A lens resin coated on the surface of the device is subjected to an exposing treatment using lens masks and a developing treatment, thereby forming lens patterns. After improving the light transmittance of the lens patterns through irradiation of UV, the lens patterns are heated so as to form micro lenses each in the shape of a hemisphere. At this point, the heating temperature is set at a temperature lower than a temperature at which the lens patterns are completely melted. As a result, the lens patterns are prevented from flowing out, and a distance between the adjacent micro lenses becomes equal to a distance between the adjacent lens patterns. Accordingly, by making small the distance between the adjacent lens patterns, the light receiving area of each micro lens can be enlarged.
申请公布号 US5976907(A) 申请公布日期 1999.11.02
申请号 US19980005048 申请日期 1998.01.09
申请人 MATSUSHITA ELECTRONICS CORPORATION 发明人 SHIGETA, YOKO;ICHIKAWA, MICHIYO;TSUKAMOTO, AKIRA
分类号 H01L31/0216;H01L31/0232;(IPC1-7):H01L31/036;H01L79/04 主分类号 H01L31/0216
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