| 摘要 |
There is provided a memory module that facilitates meeting the needs of high-speed performance and large capacity. It comprises first module substrates (101 through 108), each with multiple DRAM devices (11), and a second module substrate whereon the first modules (101 through 108) are mounted, signal line groups connected to the multiple first modules respectively are provided in parallel, and a controller LSI (50), connected to the multiple first modules respectively via the signal line groups provided in parallel, that converts the signal lines into fewer signal lines than the total number of the signal line groups and outputs the result is provided, and the second module substrate (20) is mounted on a motherboard (40). |
