发明名称 |
SILICON-INSULATOR THIN-FILM STRUCTURES FOR OPTICAL MODULATORS AND METHODS OF MANUFACTURE |
摘要 |
The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer (18), such as silicon dioxide, sandwiched between silicon layers (16, 20). The silicon layers (16, 20) have high free carrier mobility. In one aspect of the invention a high mobility silicon layer (20) can be provided by crystallizing an amorphous silicon layer. In another aspect of the invention, a high mobility silicon layer (20) can be provided by using selective epitaxial growth and extended lateral overgrowth thereof. |
申请公布号 |
WO2006017847(A3) |
申请公布日期 |
2006.05.18 |
申请号 |
WO2005US28391 |
申请日期 |
2005.08.10 |
申请人 |
HONEYWELL INTERNATIONAL INC.;KEYSER, THOMAS;LARSEN, BRADLEY, J.;YUE, CHEISAN, J. |
发明人 |
KEYSER, THOMAS;LARSEN, BRADLEY, J.;YUE, CHEISAN, J. |
分类号 |
G02F1/025;G02B6/132;G02F1/01;G02F1/225;H01L21/77 |
主分类号 |
G02F1/025 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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