发明名称 |
METHOD FOR FABRICATING A SHADOW MASK IN A TRENCH OF A MICROELECTRONIC OR MICROMECHANICAL STRUCTURE |
摘要 |
<p>The present invention provides a method for fabricating a shadow mask in a trench of a microelectronic or micromechanical structure, comprising the steps of: providing a trench in the microelectronic or micromechanical structure; providing a partial filling in the trench; providing a first liner mask layer on the partial filling; providing a sacrificial filling on the liner mask layer to completely fill the trench; shallow etching back of the sacrificial filling into the trench; forming a first mask on the top side of the sacrificial filling in the trench; removing a subregion of the sacrificial filling in the trench using the first mask; and optionally removing a subregion of the first liner mask layer below it on the partial filling, the remaining subregion of the sacrificial filling in the trench serving as a second mask.</p> |
申请公布号 |
KR20060049405(A) |
申请公布日期 |
2006.05.18 |
申请号 |
KR20050052691 |
申请日期 |
2005.06.18 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
REGUL JORN;TEMMLER DIETMAR |
分类号 |
H01L21/027;B81C1/00;H01L21/265;H01L21/31;H01L21/3213;H01L21/8242 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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