FABRICATION METHOD OF SINGLE CRYSTAL SI FILM AND FABLICATION METHOD OF TFT ADOPTING THE SAME,申请号KR20040091851-传众专利搜索

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发明名称	FABRICATION METHOD OF SINGLE CRYSTAL SI FILM AND FABLICATION METHOD OF TFT ADOPTING THE SAME
摘要
申请公布号	KR20060044060(A)	申请公布日期	2006.05.16
申请号	KR20040091851	申请日期	2004.11.11
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	TAKASHI NOGUCHI;WENXU XIANYU
分类号	H01L29/786	主分类号	H01L29/786
代理机构		代理人
主权项
地址

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