发明名称 HIGH DENSITY NANOSTRUCTURED INTERCONNECTION
摘要 A method and apparatus for forming an electrically and/or thermally conducting interconnection is disclosed wherein a first surface and a second surface are contacted with each other via a plurality of nanostructures disposed on at least one of the surfaces. In one embodiment, a first plurality of areas of nanostructures is disposed on a component in an electronics package such as, illustratively, a microprocessor. The first plurality of areas is then brought into contact with a corresponding second plurality of areas of nanostructures on a substrate, thus creating a strong friction bond. In another illustrative embodiment, a plurality of nanostructures is disposed on a component, such as a microprocessor, which is then brought into contact with a substrate. Intermolecular forces result in an attraction between the molecules of the nanostructures and the molecules of the substrate, thus creating a bond between the nanostructures and the substrate. <IMAGE> <IMAGE> <IMAGE>
申请公布号 KR20060044769(A) 申请公布日期 2006.05.16
申请号 KR20050024975 申请日期 2005.03.25
申请人 LUCENT TECHNOLOGIES INC. 发明人 BASAVANHALLY NAGESH R;CIRELLI RAYMOND A;LOPEZ OMAR DANIEL
分类号 B82B1/00;B82B3/00;B81B7/00;H01L21/60;H01L21/768;H01L23/373;H01L23/485;H01L23/49 主分类号 B82B1/00
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