| 摘要 |
<p>A dielectric layer pref. of silicon nitride (1) is deposited on the surface of a semiconductor slice pref. Si, openings are formed in (1) and a dopant (2) deposited on the slice and diffused in through the openings at pref is approx. 1200 degrees C. Pref. (1) and (2) are produced in the same appts. by luminescent discharge decomposition of (1) NH3 and SiH4 and (2) phosphine for P-diffusion or BCl3 for B-diffusion. Prior to deposition of (2) Cr and Au layers are deposited on the slice and the openings formed through these layers and (1) by a photoresist technique. The metal layers being etched through then act as an tech mask (after the resist is removed) for (1).</p> |
