| 摘要 |
A semiconductor storage device for driving a word line by a voltage higher than an external supply voltage that includes a boost circuit for outputting a boosted voltage of a first electric potential by boosting the external power supply potential, an auxiliary capacitor for storing the output potential of the boost circuit at the time of a standby state, a switch for supplying to a word line driving power supply line a second electric potential obtained by voltage dividing the first electric potential at the time of the standby and being turned off at the time of an operation, and an amplifier circuit for receiving the first electric potential as a driving power supply potential and driving the word line driving power supply line by the second electric potential at the time of the operation.
|
