| 摘要 |
A semiconductor gate structure is described, which comprises a substrate, a gate oxide positioned on the substrate, a first conductive layer positioned on the gate oxide and a second conductive layer positioned on the first conductive layer. The second conductive layer comprises a bottom portion positioned on the first conductive layer, and an upper portion positioned on the bottom portion. The width of the bottom portion is equal to that of the first conductive layer, and one side of the upper portion is aligned to one side of the bottom potion, wherein the other side of the upper portion possesses at least a lateral concave. A bit-line contact metal is subsequently formed next to the concave.
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