发明名称 Semiconductor device and method for fabricating the same
摘要 A semiconductor device has a substrate having electrode pads, a first semiconductor chip mounted on the substrate with a first adhesion layer interposed therebetween, a second semiconductor chip mounted on the first semiconductor chip with a second adhesion layer interposed therebetween and having electrode pads on the upper surface thereof, wires for bonding the electrode pads of the substrate and the electrode pads of the second semiconductor chip to each other, and a mold resin sealing therein the first and second semiconductor chips and the wires. The peripheral edge portion of the first adhesion layer is protruding outwardly from the first semiconductor chip and the peripheral edge portion of the second semiconductor chip is protruding outwardly beyond the peripheral edge portion of the first semiconductor chip.
申请公布号 US2006091563(A1) 申请公布日期 2006.05.04
申请号 US20050282726 申请日期 2005.11.21
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ARAI YOSHIYUKI;YUI TAKASHI;TAKEOKA YOSHIAKI;ITOU FUMITO;YAGUCHI YASUTAKE
分类号 H01L23/48;H01L25/18;H01L21/56;H01L23/31;H01L25/065;H01L25/07 主分类号 H01L23/48
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