| 摘要 |
A cleaning process using a cleaning liquid nozzle and a rinse process using a side rinse nozzle are performed to a wafer, and then a drying process is performed. In the drying process, the wafer is rotated, pure water starts to be supplied to a center point of the wafer from the pure water nozzle, and substantially at the same time, nitrogen gas starts to jet from a gas nozzle, at the wafer center part, to a point at a suitable distance from the wafer center. Then, while permitting the pure water nozzle to scan the wafer toward the wafer circumference, the gas nozzle is permitted to scan the wafer toward the wafer circumference in an area inner than the pure water nozzle position, after passing the wafer center.
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