| 摘要 |
A method for forming a contact of a semiconductor deices is disclosed. More specifically, in the method for forming a contact of a semiconductor device, an interlayer dielectric (hereinafter, referred to as "ILD") layer is polished using a CMP slurry having high selectivity to an oxide film in a STI (shallow trench isolation) etching process for forming a line-type storage node contact (hereinafter, referred to as "SNC", and an ILD layer having a predetermined thickness is re-formed on the semiconductor substrate to secure a sufficient etching margin to a subsequent etching process, thereby preventing loss of a hard mask nitride film of a bit line and reducing fail of a self-aligned contact (hereinafter, referred to as "SAC") between a storage node and a bit line.
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