发明名称 |
Method for forming a channel zone of a transistor and NMOS transistor |
摘要 |
In a method for forming a channel zone in field-effect transistors, a polysilicon layer is patterned above the channel zone to be formed. The polysilicon layer serves as a mask substrate for the subsequent doping of the channel zone. The expedient patterning of the polysilicon layer with holes in a gate region and pillars in a source region enables the channel zone to be doped more lightly. In another embodiment, the novel method is used for a channel width shading of a PMOS transistor cell.
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申请公布号 |
US7038272(B2) |
申请公布日期 |
2006.05.02 |
申请号 |
US20030631350 |
申请日期 |
2003.07.31 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
WEBER HANS;AHLERS DIRK;WAHL UWE;TIHANYI JENOE;WILLMEROTH ARMIN |
分类号 |
H01L29/76;H01L29/06;H01L29/10;H01L29/739;H01L29/78 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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