| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputter target manufacturing method by which a wiring film of low resistance preventing the occurrence of hillocks, etching residues, and electrochemical reaction with ITO or the like is deposited with excellent reproducibility, and generation of dust during the sputtering is suppressed. <P>SOLUTION: When manufacturing a sputter target comprising 0.001 to 30 at % of at least one kind of a first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy and Er, with the balance comprising substantially Al, an ingot in which an intermetallic compound of the first element and Al is uniformly dispersed is manufactured by the rapid solidification process after melting Al with the first element mixed therein. The ingot is worked to manufacture the sputter target. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
