| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which prevents electrical characteristics degradation of a semiconductor device and defects, such as interlayer separation, cracking in the layer or the like and which also obtains a polycrystalline layer with a predetermined thickness and small particle diameter by lamination of polycrystalline material layers. <P>SOLUTION: When, for example, a gate-electrode 2 is formed on a semiconductor substrate 4 via a silicon oxide film 5, the gate-electrode 2 is constituted by a laminate of a plurality of polycrystalline silicon layers 6. The gate-electrode 2 is formed by a manufacturing method of a thin film, having a deposition process of amorphous layers and crystallization (recrystallization) process of the amorphous material. At this time, a laminated layer structure of the polycrystalline layers 6, having the required thicknesses, can be obtained by dividing the deposition of the amorphous layers into a plurality of times so that thickness of the amorphous layer formed at one sitting is not larger than the thickness specified by a critical stress value decided, based on defect events, performing crystallization of the amorphous material each time, after the deposition process of each of the amorphous layers, and repeating the deposition process of the amorphous layers and the crystallization process of the amorphous material. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
